Point defect engineered Si sub-bandgap light-emitting diode
نویسندگان
چکیده
منابع مشابه
Point defect engineered Si sub-bandgap light-emitting diode.
We present a novel approach to enhance light emission in Si and demonstrate a sub-bandgap light emitting diode based on the introduction of point defects that enhance the radiative recombination rate. Ion implantation, pulsed laser melting and rapid thermal annealing were used to create a diode containing a self-interstitial-rich optically active region from which the zero-phonon emission line ...
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ژورنال
عنوان ژورنال: Optics Express
سال: 2007
ISSN: 1094-4087
DOI: 10.1364/oe.15.006727